isc N-Channel MOSFET Transistor

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Ultra low on-resistance

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STMICROELECTRONICS

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N-channel 100 V, 0.0145 Ohm typ., 30 A STripFET F7 Power MOSFET in TO-220FP package

該器件使用ST專有的STripFET?技術的第七代設計規(guī)則，具有新的柵極結構。因而，功率MOSFET在不同封裝中都能呈現(xiàn)最低的RDS(on)。\n ? 超低導通電阻? 經過100％雪崩測試;

ST

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N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features ? Among the lowest RDS(on) on

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STMICROELECTRONICS

意法半導體

isc N-Channel MOSFET Transistor

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ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) -RDS(on) = 18mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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