isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.2A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.53 Kbytes 頁數(shù)：2 Pages

ISC

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N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET

Description The new SuperMESH3? series is obtained through the combination of a further fine tuning of STs well established strip-based PowerMESH? layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a

文件：943.37 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N溝道950 V、1.1 Ω、7.2 A有齊納管保護(hù)的SuperMESH?功率MOSFET，TO-220、TO-220FP和TO-247封裝

The new SuperMESH3? series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH? layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dyna ? 100% avalanche tested \n? Gate charge minimized \n? Extremely large avalanche performance \n? Zener-protected \n? Very low intrinsic capacitances;

ST

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.2A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.62 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET

Description The new SuperMESH3? series is obtained through the combination of a further fine tuning of STs well established strip-based PowerMESH? layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a

文件：943.37 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.2A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.96 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電