isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=525V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3? Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

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STMICROELECTRONICS

意法半導(dǎo)體

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3? Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH? technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.19927 Mbytes 頁數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D?PAK, DPAK, TO-220FP, TO-220, IPAK

文件：1.19927 Mbytes 頁數(shù)：23 Pages

ETCList of Unclassifed Manufacturers

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N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package

These MDmesh? K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable f ? 100% avalanche tested\n? Extremely high dv/dt capability\n? Very low intrinsic capacitance? Improved diode reverse recovery characteristics\n? Zener-protected;

ST

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