isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.87 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Extremely low gate charge

文件：1.18431 Mbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N溝道650 V、0.185 Ohm典型值、16 A MDmesh M2功率MOSFET，TO-220FP封裝

These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. ? Extremely low gate charge \n? Excellent output capacitance (Coss) profile \n? 100% avalanche tested \n? Zener-protected;

ST

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N-channel 650 V, 0.205 typ., 14 A MDmesh M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ? Extremely low gate charge ? Excellent output capacitance (Coss) profile ? 100 avalanche tested ? Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh? M2 technology. Thanks to its strip layout and improved vertical structure, the devices

文件：869.04 Kbytes 頁數(shù)：15 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.97 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Extremely low gate charge

文件：1.18431 Mbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體