| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STF40NF20 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件:322.18 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | |
STF40NF20 | N-channel 200V - 0.038廓 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET??Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. ■ Gate charge minimi 文件:480.67 Kbytes 頁(yè)數(shù):17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STF40NF20 | N溝道200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247 This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. ? Gate charge minimized \n? Very good manufacturing repeatability \n? Very low intrinsic capacitances \n? 100% avalanche tested \n? Excellent figure of merit (RDS*Qg); | ST 意法半導(dǎo)體 | ST | |
N-channel 200V - 0.038廓 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET??Power MOSFET Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. ■ Gate charge minimi 文件:480.67 Kbytes 頁(yè)數(shù):17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件:331.76 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | ||
isc N-Channel MOSFET Transistor 文件:347.55 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC |
技術(shù)參數(shù)
- Package:
TO-220FP
- Grade:
Industrial
- VDSS(V):
200
- RDS(on)_max(@ VGS=10V)(Ω):
0.045
- Drain Current (Dc)_max(A):
40
- PTOT_max(W):
40
- Qg_typ(nC):
75
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STM |
20+ |
TO-220FP |
50000 |
詢價(jià) | |||
ST |
21+ |
TO-220FP |
9913 |
原裝現(xiàn)貨,假一罰十 |
詢價(jià) | ||
ST |
21+ |
TO-220FP |
6880 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
ST/意法 |
23+/24+ |
TO-220FP |
9865 |
主營(yíng)ST/意法.原裝正品.終端BOM表可配單 |
詢價(jià) | ||
ST |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
STMICRO |
25+ |
N/A |
21000 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
ST |
24+ |
TO-220-3 |
1220 |
詢價(jià) | |||
ST |
23+ |
TO220F |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ST |
24+ |
TO-220F |
2500 |
原裝現(xiàn)貨熱賣 |
詢價(jià) | ||
ST/進(jìn)口原 |
17+ |
TO-220F |
6200 |
詢價(jià) |
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