| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Features ■ Logic level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ 文件：91.94 Kbytes 頁數(shù)：13 Pages | PHI PHI | PHI | ||
N-channel TrenchMOS logic level FET 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low 文件：329.05 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：344.79 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L 文件：862.31 Kbytes 頁數(shù)：12 Pages | NEXPERIA 安世 | NEXPERIA | ||
N-channel TrenchMOS transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Features ■ Very low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters. 文件：334.21 Kbytes 頁數(shù)：15 Pages | PHI PHI | PHI | ||
N-channel TrenchMOS standard level FET General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc 文件：382.04 Kbytes 頁數(shù)：12 Pages | 恩XP | 恩XP | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：344.72 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：344.83 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP20NQ20T is supplied in the S 文件：103.48 Kbytes 頁數(shù)：9 Pages | PHI PHI | PHI | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H 文件：754.63 Kbytes 頁數(shù)：12 Pages | NEXPERIA 安世 | NEXPERIA |
技術參數(shù)
- Package name：
D2PAK
- Product status：
Production
- Channel type：
N
- Nr of transistors：
1
- VDS [max] (V)：
75
- RDSon [max] @ VGS = 10 V (mΩ)：
9
- Tj [max] (°C)：
175
- ID [max] (A)：
75
- QGD [typ] (nC)：
48.2
- QG(tot) [typ] @ VGS = 10 V (nC)：
113.1
- Ptot [max] (W)：
230
- Qr [typ] (nC)：
270
- VGSth [typ] (V)：
3
- Automotive qualified：
N
- Ciss [typ] (pF)：
4860
- Coss [typ] (pF)：
840
- Release date：
2011-01-05
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
PH |
07+ |
BGA |
17 |
詢價 | |||
PHI |
25+ |
TO252-2.5 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
24+ |
3000 |
公司存貨 |
詢價 | ||||
PHI |
23+ |
TO263 |
7000 |
絕對全新原裝!100%保質量特價!請放心訂購! |
詢價 | ||
PHI |
05+ |
原廠原裝 |
32851 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
恩XP |
12+ |
TO-263 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應。 |
詢價 | ||
PHI |
25+ |
TO-263 |
157 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
P |
23+ |
TO-263 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
PHI |
17+ |
TO-263 |
6200 |
詢價 | |||
PHI |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 |
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