| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:NCE6058AK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =58A RDS(ON) 文件:599.09 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE6065AG;Package:DFN5X6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6065AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =65A RDS(ON) 文件:659.24 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6065g/marking.html">NCE6065G;Package:DFN5X6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6065G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =65A RDS(ON) 文件:659.01 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE6080;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件:592.58 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE6080A;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce 文件:592.45 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ai/marking.html">NCE6080AI;Package:TO-251-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件:762.33 Kbytes 頁(yè)數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ak/marking.html">NCE6080AK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell 文件:605.32 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE6080AT;Package:TO-247;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件:805.82 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080d/marking.html">NCE6080D;Package:TO-263-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件:571.68 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ed/marking.html">NCE6080ED;Package:TO-263-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件:602.21 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Package:
SOT-23
- ESD Diode:
No
- VDS(max):
60V
- ID(max):
3A
- PD(max):
1.7W
- VTH(typ):
1.3V
- VGS(max):
20V
- RDS(on)(typ)(@10V):
78mΩ
- RDS(on)(typ)(@4.5V):
95mΩ
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE新潔能 |
25+ |
TO-263 |
10800 |
原廠原裝,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
NCE |
22+ |
SO8 |
8900 |
全新正品現(xiàn)貨 有掛就有現(xiàn)貨 |
詢價(jià) | ||
NCE/新潔能 |
23+ |
SOP-8 |
13163 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
NCE新潔能原廠原裝現(xiàn) |
24+ |
TO-220F |
5000 |
只有原裝 |
詢價(jià) | ||
NCE/新潔能 |
21+ |
TO-252 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
NCE新潔能原廠原裝現(xiàn) |
26+ |
TO-220F |
12000 |
原裝,正品 |
詢價(jià) | ||
NCE/新潔能 |
25+ |
TO-252 |
54558 |
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià) |
詢價(jià) | ||
NCE/新潔能 |
22+ |
S0T-23 |
30000 |
原裝正品 |
詢價(jià) | ||
NCE |
TO-251 |
50000 |
詢價(jià) | ||||
無(wú)錫新潔能 |
2447 |
TO-3P |
315000 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) |
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