| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NCE6080A | 絲?。?strong>NCE6080A;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce 文件:592.45 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | |
絲?。?a target="_blank" title="Marking" href="/nce6080ai/marking.html">NCE6080AI;Package:TO-251-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件:762.33 Kbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ak/marking.html">NCE6080AK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell 文件:605.32 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE6080AT;Package:TO-247;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件:805.82 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
NCE6080A | 12-200V N-Channel Trench MOSFET The NCE6080A uses advanced trench technology and design to provide excellent R DS(ON) ?with low gate charge. It can be used in a wide variety of applications. ? V DS =60V,I D =80AR DS(ON) =6.5m? (typical) @ V GS =10VR DS(ON) =7.5m? (typical) @ V GS =4.5V? High density cell design for ultra low Rdson? Fully characterized avalanche voltage and current? Good stability and uniformity with high E AS? Excellent package for good heat dissipation; | NCEPower 新潔能 | NCEPower | |
12-200V N-Channel Trench MOSFET | NCEPower 新潔能 | NCEPower | ||
12-200V N-Channel Trench MOSFET | NCEPower 新潔能 | NCEPower |
技術(shù)參數(shù)
- Product status:
Production
- Package:
TO-220
- Polarity:
P
- BVDSS(V):
60
- ID(A):
80
- VTH(V):
1.3
- RDS(ON)@10VTyp(mΩ):
6
- RDS(ON)@10VMax(mΩ):
7.6
- RDS(ON)@4.5VTyp(mΩ):
7.9
- RDS(ON)@4.5VMax(mΩ):
9
- VGS(th)(V):
±20
- CISS(pF):
4000
- QG(nC):
90.3
- PD(W):
110
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCE/新潔能 |
25+ |
TO-220 |
32360 |
NCE/新潔能全新特價NCE6080A即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
NCE/新潔能 |
24+ |
TO-220 |
1165 |
絕對原裝現(xiàn)貨假一賠十 |
詢價 | ||
NCE |
23+ |
TO-220 |
5 |
原裝現(xiàn)貨17377264928微信同號 |
詢價 | ||
NCE |
18+ |
TO-220 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCE新潔能 |
21+ |
TO-220 |
25000 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
無錫新潔能 |
2447 |
TO-220-3 |
105000 |
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-220 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點(diǎn)增值稅 |
詢價 | ||
NCE/新潔能 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NCE |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NCE |
25+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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