絲印：60NP2012K；Package：TO-252-4L；NCE N&P-Channel complementary Power MOSFET

Description The NCE60NP2012K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =20A RDS(ON)

文件：918.71 Kbytes 頁數(shù)：9 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/60np2016g/marking.html">60NP2016G；Package：DFN5X6-8L；NCE N&P-Channel complementary Power MOSFET

Description The NCE60NP2016G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =20A RDS(ON)

文件：998.51 Kbytes 頁數(shù)：10 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/60np4035k/marking.html">60NP4035K；Package：TO-252-4L；NCE N&P-Channel complementary Power MOSFET

Description The NCE60NP4035K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =40A RDS(ON)

文件：982.9 Kbytes 頁數(shù)：9 Pages

NCEPOWER

新潔能

絲印：60P02Y；Package：SOT23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P02Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-2A RDS(ON)

文件：413.81 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/nce60p03r/marking.html">NCE60P03R；Package：SOT-223-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Application ● Load switch ● PWM application General Features ● VDS =-60V,ID =-3A RDS(ON)

文件：661.21 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/60p03y/marking.html">60P03Y；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-3A RDS(ON)

文件：358.87 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

P-Channel 60-V (D-S) MOSFET

FEATURES ? Isolated Package ? High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) ? Sink to Lead Creepage Distance = 4.8 mm ? P-Channel ? 175 °C Operating Temperature ? Dynamic dV/dt Rating ? Low Thermal Resistance ? Lead (Pb)-free Available

文件：1.12446 Mbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

絲印：NCE60P04R；Package：SOT-223-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4.3A RDS(ON)

文件：673.71 Kbytes 頁數(shù)：8 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/60p04sn/marking.html">60P04SN；Package：SOT-23-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON)

文件：363.1 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/60p04y/marking.html">60P04Y；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON)

文件：384.14 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能