| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce6080ek/marking.html">NCE6080EK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080EK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：599.58 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce609/marking.html">NCE609；Package：TO-252-4L；N and P-Channel Enhancement Mode Power MOSFET Description The NCE609 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =21A RDS(ON) 文件：496.78 Kbytes 頁數(shù)：10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE60H10D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON) 文件：611.83 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60h10k/marking.html">NCE60H10K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON) 文件：622.2 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.36 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
絲印：NCE60H15A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON) 文件：583.74 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60h15ad/marking.html">NCE60H15AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON) 文件：568.42 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60h15at/marking.html">NCE60H15AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON) 文件：662.38 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE60H15T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON) 文件：615.44 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60h18/marking.html">NCE60H18；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =180A RDS(ON) 文件：642.57 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Package：
SOT-23
- ESD Diode：
No
- VDS(max)：
60V
- ID(max)：
3A
- PD(max)：
1.7W
- VTH(typ)：
1.3V
- VGS(max)：
20V
- RDS(on)(typ)(@10V)：
78mΩ
- RDS(on)(typ)(@4.5V)：
95mΩ
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCE/新潔能 |
22+ |
S0T-23 |
30000 |
原裝正品 |
詢價 | ||
NCE新潔能 |
25+ |
TO-263 |
10800 |
原廠原裝,價格優(yōu)勢 |
詢價 | ||
NCE/新潔能 |
23+ |
SOP-8 |
13163 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
NCE |
22+ |
SO8 |
8900 |
全新正品現(xiàn)貨 有掛就有現(xiàn)貨 |
詢價 | ||
NCE |
24+ |
SOT-89 |
12000 |
原裝正品 有掛就有貨 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-252 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
NCE/新潔能 |
24+ |
TO-252 |
80000 |
只做自己庫存 全新原裝進口正品假一賠百 可開13%增 |
詢價 | ||
NCE/新潔能 |
25+ |
TO-252 |
54558 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
NCE/新潔能 |
23+ |
SOP-8 |
9000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗原裝進口正品,做服務(wù)型企業(yè) |
詢價 |
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