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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NCE6080A

          絲?。?strong>NCE6080A;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce

          文件:592.45 Kbytes 頁(yè)數(shù):7 Pages

          NCEPOWER

          新潔能

          NCE6080AI

          絲印:NCE6080AI;Package:TO-251-3L;NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

          文件:762.33 Kbytes 頁(yè)數(shù):8 Pages

          NCEPOWER

          新潔能

          NCE6080AK

          絲?。?a target="_blank" title="Marking" href="/nce6080ak/marking.html">NCE6080AK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell

          文件:605.32 Kbytes 頁(yè)數(shù):7 Pages

          NCEPOWER

          新潔能

          NCE6080AT

          絲?。?a target="_blank" title="Marking" href="/nce6080at/marking.html">NCE6080AT;Package:TO-247;NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

          文件:805.82 Kbytes 頁(yè)數(shù):7 Pages

          NCEPOWER

          新潔能

          NCE6080A

          絲?。?strong>NCE6080A;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce

          文件:592.45 Kbytes 頁(yè)數(shù):7 Pages

          NCEPOWER

          新潔能

          NCE6080AI

          絲?。?a target="_blank" title="Marking" href="/nce6080ai/marking.html">NCE6080AI;Package:TO-251-3L;NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

          文件:762.33 Kbytes 頁(yè)數(shù):8 Pages

          NCEPOWER

          新潔能

          NCE6080AK

          絲?。?a target="_blank" title="Marking" href="/nce6080ak/marking.html">NCE6080AK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell

          文件:605.32 Kbytes 頁(yè)數(shù):7 Pages

          NCEPOWER

          新潔能

          NCE6080AT

          絲?。?a target="_blank" title="Marking" href="/nce6080at/marking.html">NCE6080AT;Package:TO-247;NCE N-Channel Enhancement Mode Power MOSFET

          Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

          文件:805.82 Kbytes 頁(yè)數(shù):7 Pages

          NCEPOWER

          新潔能

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          NCE/新潔能
          25+
          TO-220
          32360
          NCE/新潔能全新特價(jià)NCE6080A即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
          詢價(jià)
          NCE/新潔能
          24+
          TO-220
          1165
          絕對(duì)原裝現(xiàn)貨假一賠十
          詢價(jià)
          NCE
          23+
          TO-220
          5
          原裝現(xiàn)貨17377264928微信同號(hào)
          詢價(jià)
          NCE
          18+
          TO-220
          41200
          原裝正品,現(xiàn)貨特價(jià)
          詢價(jià)
          NCE新潔能
          21+
          TO-220
          25000
          進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
          詢價(jià)
          無(wú)錫新潔能
          2447
          TO-220-3
          105000
          50個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
          詢價(jià)
          NCE/新潔能
          21+
          TO-220
          30000
          百域芯優(yōu)勢(shì) 實(shí)單必成 可開(kāi)13點(diǎn)增值稅
          詢價(jià)
          NCE/新潔能
          23+
          TO-220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          NCE
          23+
          TO-220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          NCE
          25+
          TO-220
          10000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          更多NCE6080A供應(yīng)商 更新時(shí)間2026-1-19 9:04:00
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