| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce60h21/marking.html">NCE60H21;Package:TO-220;NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE60H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V ,ID =210A RDS(ON) 文件:387.37 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60h28ll/marking.html">NCE60H28LL;Package:TO-LL;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H28LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Gen 文件:585.2 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60h30t/marking.html">NCE60H30T;Package:TO-247;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =300A RDS(ON) 文件:659.98 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:60ND03N;Package:SOT-23-6L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON) 文件:647.65 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/60nd03s/marking.html">60ND03S;Package:SOP-8;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON) 文件:664.37 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE60ND08S;Package:SOP-8;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =8A RDS(ON) 文件:409.36 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/60nd45ag/marking.html">60ND45AG;Package:DFN5X6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 文件:621.39 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:60ND45XG;Package:DFN5X6-8L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45XG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Load switch 文件:618.96 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60np09s/marking.html">NCE60NP09S;Package:SOP-8;NCE 60V Complementary MOSFET Description The NCE60NP09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =9A RDS(ON) 文件:1.0165 Mbytes 頁數(shù):10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/60np1515k/marking.html">60NP1515K;Package:TO-252-4L;NCE N&P-Channel complementary Power MOSFET Description The NCE60NP1515K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =15A RDS(ON) 文件:859.23 Kbytes 頁數(shù):9 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Package:
SOT-23
- ESD Diode:
No
- VDS(max):
60V
- ID(max):
3A
- PD(max):
1.7W
- VTH(typ):
1.3V
- VGS(max):
20V
- RDS(on)(typ)(@10V):
78mΩ
- RDS(on)(typ)(@4.5V):
95mΩ
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCE |
22+ |
SO8 |
8900 |
全新正品現(xiàn)貨 有掛就有現(xiàn)貨 |
詢價 | ||
NCE/新潔能 |
22+ |
S0T-23 |
30000 |
原裝正品 |
詢價 | ||
NCE新潔能原廠原裝現(xiàn) |
24+ |
TO-220F |
5000 |
只有原裝 |
詢價 | ||
NCE/新潔能 |
23+ |
TO-220 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
NCE新潔能原廠原裝現(xiàn) |
26+ |
TO-220F |
12000 |
原裝,正品 |
詢價 | ||
NCE/新潔能 |
24+ |
TO-252 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
NCE/新潔能 |
24+ |
TO-252 |
80000 |
只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增 |
詢價 | ||
NCE/新潔能 |
23+ |
SOP-8 |
9000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
鑫遠(yuǎn)鵬 |
25+ |
NA |
5000 |
價優(yōu)秒回原裝現(xiàn)貨 |
詢價 | ||
NA |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價 |
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- SI7948DP
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- SE1
- PI7C8150B
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- PERICOMPI7C8150
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