| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NCE6080 | 絲?。?strong>NCE6080；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：592.58 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | |
NCE6080 | 12-200V N-Channel Trench MOSFET | NCEPower 新潔能 | NCEPower | |
絲?。?a target="_blank" title="Marking" href="/nce6080a/marking.html">NCE6080A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce 文件：592.45 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ai/marking.html">NCE6080AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件：762.33 Kbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ak/marking.html">NCE6080AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell 文件：605.32 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE6080AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件：805.82 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080d/marking.html">NCE6080D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：571.68 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ed/marking.html">NCE6080ED；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：602.21 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ek/marking.html">NCE6080EK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080EK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：599.58 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
N-Channel 60 V (D-S) 175 ?C MOSFET 文件：996.94 Kbytes 頁數(shù)：8 Pages | VBSEMI 微碧半導體 | VBSEMI |
技術(shù)參數(shù)
- Product status：
Production
- Package：
TO-220
- Polarity：
P
- BVDSS(V)：
60
- ID(A)：
80
- VTH(V)：
2.8
- RDS(ON)@10VTyp(mΩ)：
6
- RDS(ON)@10VMax(mΩ)：
6.7
- VGS(th)(V)：
±20
- CISS(pF)：
4000
- QG(nC)：
90.3
- PD(W)：
110
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCE |
2406 |
TO-220 |
3500 |
原裝現(xiàn)貨17377264928微信同號 |
詢價 | ||
NCE |
25+ |
TO-220-3L |
20000 |
原裝正品價格優(yōu)惠,志同道合共謀發(fā)展 |
詢價 | ||
NCE |
2406 |
TO-220 |
3230 |
正規(guī)渠道貨源 |
詢價 | ||
NCE/新潔能 |
25+ |
TO-220 |
60000 |
全新原裝現(xiàn)貨特價銷售,歡迎來電查詢 |
詢價 | ||
NCE |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCE新潔能 |
21+ |
TO-251 |
25000 |
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
無錫新潔能 |
2447 |
TO-263 |
105000 |
800個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-252 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
NCE/新潔能 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NCE |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
