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首頁 >NCE6>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
NCE60P04Y	文件：1.11335 Mbytes Page：10 Pages	P-Channel 60-V (D-S) MOSFET FEATURES ? Isolated Package ? High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) ? Sink to Lead Creepage Distance = 4.8 mm ? P-Channel ? 175 °C Operating Temperature ? Dynamic dV/dt Rating ? Low Thermal Resistance ? Lead (Pb)-free Available 文件：1.11335 Mbytes 頁數(shù)：10 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
NCE60P05BY	文件：381.35 Kbytes Page：7 Pages	絲?。?a target="_blank" title="Marking" href="/60p05by/marking.html">60P05BY；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON) 文件：381.35 Kbytes 頁數(shù)：7 Pages	NCEPOWER 新潔能	NCEPOWER
NCE60P05N	文件：416.25 Kbytes Page：7 Pages	絲?。?a target="_blank" title="Marking" href="/lnce60p05n/marking.html">LNCE60P05N；Package：SOT-23-6L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON) 文件：416.25 Kbytes 頁數(shù)：7 Pages	NCEPOWER 新潔能	NCEPOWER
NCE60P05R	文件：496.98 Kbytes Page：8 Pages	絲印：NCE60P05R；Package：SOT-223-3L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON) 文件：496.98 Kbytes 頁數(shù)：8 Pages	NCEPOWER 新潔能	NCEPOWER
NCE60P06S	文件：318.44 Kbytes Page：7 Pages	絲?。?a target="_blank" title="Marking" href="/nce60p06s/marking.html">NCE60P06S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-6A RDS(ON) 文件：318.44 Kbytes 頁數(shù)：7 Pages	NCEPOWER 新潔能	NCEPOWER
NCE60P07AS	文件：376.62 Kbytes Page：7 Pages	絲?。?a target="_blank" title="Marking" href="/nce60p07as/marking.html">NCE60P07AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-7A RDS(ON) 文件：376.62 Kbytes 頁數(shù)：7 Pages	NCEPOWER 新潔能	NCEPOWER
NCE60P08AS	文件：414.65 Kbytes Page：7 Pages	絲?。?a target="_blank" title="Marking" href="/nce60p08as/marking.html">NCE60P08AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P08AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-8A RDS(ON) 文件：414.65 Kbytes 頁數(shù)：7 Pages	NCEPOWER 新潔能	NCEPOWER
NCE60P09AS	文件：293.15 Kbytes Page：7 Pages	絲印：NCE60P09AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-9A RDS(ON) 文件：293.15 Kbytes 頁數(shù)：7 Pages	NCEPOWER 新潔能	NCEPOWER
NCE60P09K	文件：659.59 Kbytes Page：7 Pages	絲?。?a target="_blank" title="Marking" href="/nce60p09k/marking.html">NCE60P09K；Package：TO-252；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Application ● Load switch ● PWM application General Features ● VDS =-60V,ID =-9A RDS(ON) 文件：659.59 Kbytes 頁數(shù)：7 Pages	NCEPOWER 新潔能	NCEPOWER
NCE60P09S	文件：290.33 Kbytes Page：7 Pages	絲?。?a target="_blank" title="Marking" href="/nce60p09s/marking.html">NCE60P09S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-9A RDS(ON) 文件：290.33 Kbytes 頁數(shù)：7 Pages	NCEPOWER 新潔能	NCEPOWER

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技術(shù)參數(shù)

Package：
SOT-23
ESD Diode：
No
VDS(max)：
60V
ID(max)：
3A
PD(max)：
1.7W
VTH(typ)：
1.3V
VGS(max)：
20V
RDS(on)(typ)(@10V)：
78mΩ
RDS(on)(typ)(@4.5V)：
95mΩ

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	NCE60R540F	NCE	20+	TO-220F	15800	原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市粵駿騰電子科技有限公司	NCE6005AR/SOT-223	新潔能	24+	NA	250000	原裝現(xiàn)貨	詢價(jià)
艾睿（深圳）半導(dǎo)體有限公司	NCE60TD60BP	無錫新潔能	2447	TO-3P	315000	一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市中遠(yuǎn)芯科技有限公司	NCE65R360	NCE/新潔能	24+	TO-220	100000	原裝現(xiàn)貨	詢價(jià)
深圳市富達(dá)微科技有限公司	NCE65TF130	NCE	24+	TO-220	8000	原廠原裝，價(jià)格優(yōu)勢(shì)，歡迎洽談！	詢價(jià)
深圳市明嘉萊科技有限公司	NCE65R1K2K	NCE/新潔能	24+	TO-252	880000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市賽特興科技有限公司	NCE60H15AD	NCE	23+	TO-263	1600	正規(guī)渠道,只有原裝!	詢價(jià)
深圳市萊克訊科技有限公司	NCE6050KA	NCE/新潔能	1925+	TO-252	12500	原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)可供更多可出樣	詢價(jià)
上海專毅電子科技有限公司	NCE60P04Y	新潔能	SOT23-3L	21+	10000	全新原裝現(xiàn)貨QQ3100163861電話16601719780 張小姐	詢價(jià)
深圳市宏捷佳電子科技有限公司	NCE6890	NCE	25+	TO-TO-220	12300	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)

更多NCE6供應(yīng)商更新時(shí)間2026-1-18 14:14:00

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