| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NCE6080 | 絲?。?strong>NCE6080；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：592.58 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | |
絲?。?a target="_blank" title="Marking" href="/nce6080a/marking.html">NCE6080A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce 文件：592.45 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ai/marking.html">NCE6080AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件：762.33 Kbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE6080AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell 文件：605.32 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080at/marking.html">NCE6080AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件：805.82 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080d/marking.html">NCE6080D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：571.68 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE6080ED；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：602.21 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce6080ek/marking.html">NCE6080EK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080EK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：599.58 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
NCE6080 | 絲印：NCE6080；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：592.58 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | |
絲?。?a target="_blank" title="Marking" href="/nce6080a/marking.html">NCE6080A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce 文件：592.45 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE |
2406 |
TO-220 |
3500 |
原裝現(xiàn)貨17377264928微信同號(hào) |
詢價(jià) | ||
NCE |
25+ |
TO-220-3L |
20000 |
原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展 |
詢價(jià) | ||
NCE |
2406 |
TO-220 |
3230 |
正規(guī)渠道貨源 |
詢價(jià) | ||
NCE/新潔能 |
25+ |
TO-220 |
60000 |
全新原裝現(xiàn)貨特價(jià)銷售,歡迎來電查詢 |
詢價(jià) | ||
NCE |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
NCE新潔能 |
21+ |
TO-251 |
25000 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
無錫新潔能 |
2447 |
TO-263 |
105000 |
800個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng) |
詢價(jià) | ||
NCE/新潔能 |
21+ |
TO-252 |
30000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
NCE/新潔能 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NCE |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
相關(guān)芯片絲印
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- LMAK14P06
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- FTK65T180
- LCE65T180
- NCE65T180
- NCE65T180
- NCE65T180D
- FTK65T180F
- NCE65T180F
- NCE65T180F
- NCE65T180V
