| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：NCE60P10K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-10A RDS(ON) 文件：767.55 Kbytes 頁數(shù)：8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p12as/marking.html">NCE60P12AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-12A RDS(ON) 文件：450.72 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p12k/marking.html">NCE60P12K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-12A RDS(ON) 文件：439.97 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p14k/marking.html">NCE60P14K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-14A RDS(ON) 文件：793.75 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE60P16AK；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-16A RDS(ON) 文件：454.3 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p16aq/marking.html">NCE60P16AQ；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ● Power management ● Load switch General Features ● VDS = -60V,ID = -16A RDS(ON) 文件：414.99 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p17aq/marking.html">NCE60P17AQ；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P17AQ uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ●Power management ●Load switch General Features ● VDS = -60V,ID = -17A RDS(ON) 文件：715.86 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p18aq/marking.html">NCE60P18AQ；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P18AQ uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ●Power management ●Load switch General Features ● VDS = -60V,ID = -18A RDS(ON) 文件：350.86 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p28ak/marking.html">NCE60P28AK；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-28A RDS(ON) 文件：388.61 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce60p40f/marking.html">NCE60P40F；Package：TO-220F；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P40F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-40A RDS(ON) 文件：287.48 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Package：
SOT-23
- ESD Diode：
No
- VDS(max)：
60V
- ID(max)：
3A
- PD(max)：
1.7W
- VTH(typ)：
1.3V
- VGS(max)：
20V
- RDS(on)(typ)(@10V)：
78mΩ
- RDS(on)(typ)(@4.5V)：
95mΩ
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
無錫新潔能 |
2447 |
TO-3P |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NCE |
20+ |
TO-220F |
15800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
NCE |
23+ |
TO-263 |
1600 |
正規(guī)渠道,只有原裝! |
詢價 | ||
NCE/新潔能 |
24+ |
TO-220 |
100000 |
原裝現(xiàn)貨 |
詢價 | ||
新潔能 |
SOT23-3L |
21+ |
10000 |
全新原裝現(xiàn)貨QQ3100163861電話16601719780 張小姐 |
詢價 | ||
NCE/新潔能 |
ROHS/new original |
TO-252 |
10500 |
原裝元器件供應(yīng)現(xiàn)貨支持。咨詢更多現(xiàn)貨庫存,支持樣 |
詢價 | ||
NCE/新潔能 |
1925+ |
TO-252 |
12500 |
原裝現(xiàn)貨價格優(yōu)勢可供更多可出樣 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-252 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
新潔能 |
24+ |
NA |
250000 |
原裝現(xiàn)貨 |
詢價 | ||
NCE新潔能 |
21+ |
TO-247 |
25000 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 |
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