RF Power Field Effect Transistor

1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

文件：388.59 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor

1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

文件：388.59 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF POWER FET TRANSISTOR

DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. FEATURES INCLUDE: ? Bradband performance from HF to 1 GHz ? Omnigold? Metalization System ? High Gain, Rugged device.

文件：271.9 Kbytes 頁數(shù)：1 Pages

ASI

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

? High Gain, Rugged Device ? Broadband Performance from HF to 1 GHz ? Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

文件：133.23 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

? High Gain, Rugged Device ? Broadband Performance from HF to 1 GHz ? Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

文件：133.23 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance at 945 MHz, 28 Vol

文件：221.19 Kbytes 頁數(shù)：10 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance at 945 MHz, 28 Vol

文件：996.33 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance at 945 MHz, 28 Vol

文件：996.33 Kbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance at 945 MHz, 28 Vol

文件：221.19 Kbytes 頁數(shù)：10 Pages

MOTOROLA

摩托羅拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance @ 945 MHz, 28 Volts

文件：194.51 Kbytes 頁數(shù)：9 Pages

MOTOROLA

摩托羅拉