LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance at 945 MHz, 28 Vol

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MOTOROLA

摩托羅拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance at 945 MHz, 28 Vol

文件：996.33 Kbytes 頁(yè)數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance at 945 MHz, 28 Vol

文件：996.33 Kbytes 頁(yè)數(shù)：12 Pages

MOTOROLA

摩托羅拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance at 945 MHz, 28 Vol

文件：221.19 Kbytes 頁(yè)數(shù)：10 Pages

MOTOROLA

摩托羅拉

1.0 GHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF183R1\" removed from active portfolio. Possible Replacement Part: \"MRF9045LR1\".The MRF183R1 is designed for broadband commercialand industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, common sour \n?Guaranteed Performance at 945 MHz, 28 Volts\n Output Power — 45 Watts PEP\n\tPower Gain — 11.5 dB\n\tEfficiency — 33%\n\tIMD — ??28 dBc\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?1;

恩XP

45 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment.? Guaranteed Performance at 945 MHz, 28 Volts\n

恩XP

1.0 GHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF183SR1\"removed from active portfolio. Possible Replacement Part: \"MRF9045MR1\" or \"MRF9045LSR1\".The MRF183SR1 is designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device makes them ideal for la \n?Guaranteed Performance at 945 MHz, 28 Volts\n Output Power — 45 Watts PEP\n\tPower Gain — 11.5 dB\n\tEfficiency — 33%\n\tIMD — ??28 dBc\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?1;

恩XP