LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance @ 945 MHz, 28 Volts

文件：194.51 Kbytes 頁數(shù)：9 Pages

MOTOROLA

摩托羅拉

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance @ 945 MHz, 28 Volt

文件：1.01553 Mbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance @ 945 MHz, 28 Volts

文件：194.51 Kbytes 頁數(shù)：9 Pages

MOTOROLA

摩托羅拉

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. ? Guaranteed Performance @ 945 MHz, 28 Volt

文件：1.01553 Mbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF184LSR1\" removed from active portfolio. Possible Replacement Part: \"MRF9060MR1\" or \"MRF9060LSR1\".The MRF184LSR1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for lar \n?Guaranteed Performance at 945 MHz, 28 Volts\n Output Power = 60 Watts\n\tPower Gain = 11.5 dB\n\tEfficiency = 53%\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?100% Tested for Loa;

恩XP

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF184R1\" removed from active portfolio. Possible Replacement Part: \"MRF9060LR1\".The MRF184R1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, common sourc \n?Guaranteed Performance at 945 MHz, 28 Volts\n\nOutput Power = 60 Watts\nPower Gain = 11.5 dB\nEfficiency = 53%\n\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?100% Tested for Load;

恩XP

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF184SR1\" removed from active portfolio. Possible Replacement Part: \"MRF9060MR1\" or \"MRF9060LSR1\".The MRF184SR1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large \n?Guaranteed Performance at 945 MHz, 28 Volts\n Output Power = 60 Watts\n\tPower Gain = 11.5 dB\n\tEfficiency = 53%\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?100% Tested for Loa;

恩XP