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          首頁 >MRF1>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF1

          Fast Acting Radial Lead Micro Fuse Series

          Fast Acting Radial Lead Micro Fuse Series

          文件:102.1 Kbytes 頁數(shù):2 Pages

          BEL

          MRF1

          TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES

          文件:1.37879 Mbytes 頁數(shù):4 Pages

          BEL

          MRF1.25

          Fast Acting Radial Lead Micro Fuse Series

          Fast Acting Radial Lead Micro Fuse Series

          文件:102.1 Kbytes 頁數(shù):2 Pages

          BEL

          MRF1.6

          Fast Acting Radial Lead Micro Fuse Series

          Fast Acting Radial Lead Micro Fuse Series

          文件:102.1 Kbytes 頁數(shù):2 Pages

          BEL

          MRF100

          Fast Acting Radial Lead Micro Fuse Series

          Fast Acting Radial Lead Micro Fuse Series

          文件:102.1 Kbytes 頁數(shù):2 Pages

          BEL

          MRF10005

          Microwave Power Silicon Bipolar Transistor 5.0 W, 960-1215 MHz, 28V

          Description and Applications Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range with high overall duty cycles. Features ? Guaranteed performance @1.215GHz, 28Vdc ? Output power: 5.0W CW ? Minimum gain = 8.5dB,

          文件:198.78 Kbytes 頁數(shù):5 Pages

          MA-COM

          MRF10005

          MICROWAVE POWER TRANSISTOR

          The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. ? Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW

          文件:100.17 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF10005

          The RF Line Microwave Power Transistor

          . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. ? Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) ? RF P

          文件:160.25 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF1000MB

          MICROWAVE POWER TRANSISTORS NPN SILICON

          Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. ? Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB ? 100 Tested for Load Mismatch at All Pha

          文件:104.81 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF1000MB

          Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V

          Description and Applications Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Features ? Guaranteed performance @ 1090 MHz, 18 Vdc — Class A ? Output power: 0.2W ? Minimum gain: 10dB ? 100 tested

          文件:170.22 Kbytes 頁數(shù):4 Pages

          MA-COM

          技術(shù)參數(shù)

          • Min Frequency(MHz):

            960

          • Max Frequency(MHz):

            1215

          • Bias Voltage(V):

            28.0

          • Pout(W):

            5.00

          • Gain(dB):

            8.50

          • Efficiency(%):

            45

          • Type:

            Bipolar

          • Package:

            Flange Ceramic Pkg

          • Package Category:

            Ceramic Flange Mount

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          更多MRF1供應(yīng)商 更新時(shí)間2026-1-19 8:31:00
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