RF Power Field Effect Transistor

1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

文件：388.59 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS

文件：175.03 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor

1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

文件：388.59 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS

文件：175.03 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

Overview The MRF18090AR3 is designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.Archived content is no longer updated \n?GSM and GSM EDGE Performances, Full Frequency Band\nPower Gain: 13.5 dB (Typ) @ 90 Watts CW\nEfficiency: 52% (Typ) @ 90 Watts CW\n\n\n?Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power\n\n?Internally Matched for Ease of Use\n\n?High Gain, High Efficiency and High Linearity\n\n;

恩XP

1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

Overview MRF18090AS, MRF18090ASR3 removed from active portfolio. View replacement parts via Part Number Search. \n?GSM and GSM EDGE Performances, Full Frequency Band\n\nPower Gain — 13.5 dB (Typ) @ 90 Watts (CW)\nEfficiency — 52% (Typ) @ 90 Watts (CW)\n\n?Internally Matched, Controlled Q, for Ease of Use\n?High Gain, High Efficiency and High Linearity\n?Integrated ESD Protection\n?Designed for Maximum Gai;

恩XP