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                >MRF1>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          MRF175GU
          N-CHANNEL MOS BROADBAND RF POWER FETs
          
The RF MOSFET Line
RF Power
???????Field-Effect Transistors
N–Channel Enhancement–Mode

Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state 
          文件：183.2 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF175GV
          RF POWER FIELD-EFFECT TRANSISTOR
          
DESCRIPTION:
The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.
          文件：22.41 Kbytes 頁數(shù)：1 Pages
          ASI
          

          MRF175GV
          The RF MOSFET Line 200/150W, 500MHz, 28V
          
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
N–Channel enhancement mode

          文件：447.7 Kbytes 頁數(shù)：16 Pages
          MA-COM
          

          MRF175GV
          N-CHANNEL MOS BROADBAND RF POWER FETs
          
The RF MOSFET Line
RF Power
???????Field-Effect Transistors
N–Channel Enhancement–Mode

Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state 
          文件：183.2 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF175GV
          N-CHANNEL MOS BROADBAND RF POWER FETs
          
The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-mode
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm
          文件：214.11 Kbytes 頁數(shù)：11 Pages
          MACOM
          

          MRF175GV
          RF Power Field-Effect Transistors
          
The RF MOSFET Line
RF Power
???????Field-Effect Transistors
N–Channel Enhancement–Mode

Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state 
          文件：110.09 Kbytes 頁數(shù)：2 Pages
          NJSEMINew Jersey Semi-Conductor Products, Inc.
          新澤西半導(dǎo)體新澤西半導(dǎo)體公司
          

          MRF175LU
          N-CHANNEL BROADBAND RF POWER FETs
          
Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
? Guaranteed Performance
 
          文件：138.89 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF175LV
          N-CHANNEL BROADBAND RF POWER FETs
          
Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
? Guaranteed Performance
 
          文件：138.89 Kbytes 頁數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF176
          N-CHANNEL MOS BROADBAND RF POWER FETs
          
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
? Electrical Performance
  
          文件：177.91 Kbytes 頁數(shù)：10 Pages
          MOTOROLA
          摩托羅拉
          

          MRF176GU
          N-CHANNEL MOS BROADBAND RF POWER FETs
          
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
? Electrical Performance
  
          文件：177.91 Kbytes 頁數(shù)：10 Pages
          MOTOROLA
          摩托羅拉
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Min Frequency(MHz)：
            960
          • Max Frequency(MHz)：
            1215
          • Bias Voltage(V)：
            28.0
          • Pout(W)：
            5.00
          • Gain(dB)：
            8.50
          • Efficiency(%)：
            45
          • Type：
            Bipolar
          • Package：
            Flange Ceramic Pkg
          • Package Category：
            Ceramic Flange Mount
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          
                
          



          FREESCALE
          		

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          8510
          		

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          FREESCALE
          		

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          6200
          		

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          1100
          		

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          FSL
          		

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          FREESCALE
          		

          0805+
          		

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          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          		
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          8880
          		

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詢價(jià)
          

          



          FREESCAL
          		

          NEW
          		

          模塊
          		

          3562
          		

          代理全系列銷售, 全新原裝正品,價(jià)格優(yōu)勢,長期供應(yīng),量大可訂
          		
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