RF Power Field Effect Transistor

1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

Overview The MRF18090AR3 is designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.Archived content is no longer updated \n?GSM and GSM EDGE Performances, Full Frequency Band\nPower Gain: 13.5 dB (Typ) @ 90 Watts CW\nEfficiency: 52% (Typ) @ 90 Watts CW\n\n\n?Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power\n\n?Internally Matched for Ease of Use\n\n?High Gain, High Efficiency and High Linearity\n\n;

恩XP

高頻管

MOTOROLA

摩托羅拉

上傳：深圳市金嘉銳電子有限公司

TO-272

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

上傳：深圳龐田科技有限公司

TO-272

FREESCALE/飛思卡爾

上傳：深圳龐田科技有限公司