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    首頁(yè)
                >MRF1>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    MRF184R1
    N-Channel Enhancement-Mode Lateral MOSFETs
    
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance @ 945 MHz, 28 Volt
    文件：1.01553 Mbytes 頁(yè)數(shù)：12 Pages
    MOTOROLA
    摩托羅拉
    

    MRF184S
    LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
    
Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance @ 945 MHz, 28 Volts
    文件：194.51 Kbytes 頁(yè)數(shù)：9 Pages
    MOTOROLA
    摩托羅拉
    

    MRF184SR1
    N-Channel Enhancement-Mode Lateral MOSFETs
    
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment.
? Guaranteed Performance @ 945 MHz, 28 Volt
    文件：1.01553 Mbytes 頁(yè)數(shù)：12 Pages
    MOTOROLA
    摩托羅拉
    

    MRF185
    LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
    
? High Gain, Rugged Device
? Broadband Performance from HF to 1 GHz
? Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances
    文件：56.65 Kbytes 頁(yè)數(shù)：4 Pages
    MOTOROLA
    摩托羅拉
    

    MRF186
    The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET
    
The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET



Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common
    文件：446.2 Kbytes 頁(yè)數(shù)：8 Pages
    MOTOROLA
    摩托羅拉
    

    MRF187
    RF POWER FIELD EFFECT TRANSISTORS
    
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source 
    文件：360.77 Kbytes 頁(yè)數(shù)：8 Pages
    MOTOROLA
    摩托羅拉
    

    MRF1.6/5.6-AP-2.5C
    RFCO-AXIAL CONNECTORS(MODEL IEC169-13 1.6/5.6 COAXIAL CONNECTORS)
    文件：199.83 Kbytes 頁(yè)數(shù)：4 Pages
    HIROSEHirose Electric Company
    廣瀨日本廣瀨電機(jī)株式會(huì)社
    

    MRF1.6/5.6-AP-59U
    RFCO-AXIAL CONNECTORS(MODEL IEC169-13 1.6/5.6 COAXIAL CONNECTORS)
    文件：199.83 Kbytes 頁(yè)數(shù)：4 Pages
    HIROSEHirose Electric Company
    廣瀨日本廣瀨電機(jī)株式會(huì)社
    

    MRF1.6/5.6-BCUPA
    RFCO-AXIAL CONNECTORS(MODEL IEC169-13 1.6/5.6 COAXIAL CONNECTORS)
    文件：199.83 Kbytes 頁(yè)數(shù)：4 Pages
    HIROSEHirose Electric Company
    廣瀨日本廣瀨電機(jī)株式會(huì)社
    

    MRF1.6/5.6-LPJ-179U
    RFCO-AXIAL CONNECTORS(MODEL IEC169-13 1.6/5.6 COAXIAL CONNECTORS)
    文件：199.83 Kbytes 頁(yè)數(shù)：4 Pages
    HIROSEHirose Electric Company
    廣瀨日本廣瀨電機(jī)株式會(huì)社
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Min Frequency(MHz)：
      960
    • Max Frequency(MHz)：
      1215
    • Bias Voltage(V)：
      28.0
    • Pout(W)：
      5.00
    • Gain(dB)：
      8.50
    • Efficiency(%)：
      45
    • Type：
      Bipolar
    • Package：
      Flange Ceramic Pkg
    • Package Category：
      Ceramic Flange Mount
    
            
    
        
    
            
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