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          首頁(yè)
                >MRF1>規(guī)格書列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          MRF18085ALSR3
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：379.56 Kbytes 頁(yè)數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085ALSR3
          The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：409.77 Kbytes 頁(yè)數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085AR3
          The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：409.77 Kbytes 頁(yè)數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085AR3
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu
          文件：379.56 Kbytes 頁(yè)數(shù)：8 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085B
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full F
          文件：610.58 Kbytes 頁(yè)數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085B
          RF Power Field Effect Transistors
          
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full Frequency Band (193
          文件：445.63 Kbytes 頁(yè)數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF18085BLR3
          RF Power Field Effect Transistors
          
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full Frequency Band (193
          文件：445.63 Kbytes 頁(yè)數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF18085BLSR3
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full F
          文件：610.58 Kbytes 頁(yè)數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          MRF18085BLSR3
          RF Power Field Effect Transistors
          
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full Frequency Band (193
          文件：445.63 Kbytes 頁(yè)數(shù)：12 Pages
          FREESCALEFreescale Semiconductor, Inc
          飛思卡爾飛思卡爾半導(dǎo)體
          

          MRF18085BR3
          RF Power Field Effect Transistors
          
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
? GSM and GSM EDGE Performance, Full F
          文件：610.58 Kbytes 頁(yè)數(shù)：12 Pages
          MOTOROLA
          摩托羅拉
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Min Frequency(MHz)：
            960
          • Max Frequency(MHz)：
            1215
          • Bias Voltage(V)：
            28.0
          • Pout(W)：
            5.00
          • Gain(dB)：
            8.50
          • Efficiency(%)：
            45
          • Type：
            Bipolar
          • Package：
            Flange Ceramic Pkg
          • Package Category：
            Ceramic Flange Mount
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          
                
          



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          20
          		

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          1693
          		

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          3200
          		

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          100
          		

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          FREESCALE
          		

          05/06+
          		

          		

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          MOTO
          		

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          SOP
          		

          6980
          		

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          原廠
          		

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          原廠封裝
          		

          7860
          		

          原裝現(xiàn)貨假一罰十
          		
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          17+
          		

          SMD
          		

          6200
          		

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