RF POWER FET TRANSISTOR

DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. FEATURES INCLUDE: ? Bradband performance from HF to 1 GHz ? Omnigold? Metalization System ? High Gain, Rugged device.

文件：271.9 Kbytes 頁數(shù)：1 Pages

ASI

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

? High Gain, Rugged Device ? Broadband Performance from HF to 1 GHz ? Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

文件：133.23 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF POWER FET TRANSISTOR

ASI Semiconductor

RF MOSFET

NJS

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

? High Gain, Rugged Device ? Broadband Performance from HF to 1 GHz ? Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

文件：133.23 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

1.0 GHz, 30 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF182R1\" removed from active portfolio. Possible Replacement Part: \"MRF9030LR1\". \n?High Gain, Rugged Device\n?Broadband Performance from HF to 1 GHz\t\n?Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances\n?Available only in Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.;

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