| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFBC30A | Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt 文件：101.63 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRFBC30A | iscN-Channel MOSFET Transistor 文件：328.78 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRFBC30A | Power MOSFET 文件：155.85 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBC30A | Power MOSFET 文件：179.3 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFETs FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to Ro 文件：274.61 Kbytes 頁數(shù)：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFETs FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to Ro 文件：274.61 Kbytes 頁數(shù)：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET? Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt 文件：175.46 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt 文件：147.97 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFETs FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to Ro 文件：274.61 Kbytes 頁數(shù)：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFETs FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Compliant to Ro 文件：274.61 Kbytes 頁數(shù)：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
IRFBC30A
- 功能描述：
MOSFET N-Chan 600V 3.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO 220 |
161067 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
05+ |
原廠原裝 |
38791 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
24+ |
原廠封裝 |
4871 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
23+ |
TO220 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
VISHAY |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
2022+ |
25 |
全新原裝 貨期兩周 |
詢價 | |||
NEXPERIA/安世 |
23+ |
SOT753 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
IR |
2447 |
TO-220 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
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