-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET

-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

文件：327.74 Kbytes 頁數(shù)：7 Pages

INTERSIL

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ?TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

文件：133.06 Kbytes 頁數(shù)：7 Pages

IRF

Avalanche-Energy-Rated P-Channel Power MOSFETs

-5.5A and -6.5A, -60Vand-100V rDS(on) = 0.30Ω and 0.40Ω The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gat

文件：687.87 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

P-Channel MOSFET in a Hermetically sealed TO39

文件：16.7 Kbytes 頁數(shù)：1 Pages

SEME-LAB

P-CHANNEL POWER MOSFET

文件：207.74 Kbytes 頁數(shù)：3 Pages

SEME-LAB

高可靠性功率 MOSFET

\n優(yōu)勢:;

Infineon

英飛凌

-6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET

Renesas

瑞薩

MOSFETs and JFETs

TT Electronics

P-CHANNEL POWER MOSFET

文件：207.74 Kbytes 頁數(shù)：3 Pages

SEME-LAB