1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

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FAIRCHILD

仙童半導(dǎo)體

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

文件：52.27 Kbytes 頁數(shù)：6 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple comb

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g

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VISHAYVishay Siliconix

威世威世科技公司

1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs

Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul

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HARRIS

Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multip

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IRF

Power MOSFET

文件：1.83877 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching con ? 1.3A, 100V\n? rDS(ON) = 0.300?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

Renesas

瑞薩

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? For automatic insertion;

Vishay

威世

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

ONSEMI

安森美半導(dǎo)體