1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET

1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

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INTERSIL

N-CHANNEL POWER MOSFET

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SEME-LAB

HiRel MOSFETs

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Infineon

英飛凌

2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs

2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these pow

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INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A)

Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

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IRF