0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All o these power MOSFETs are designed for applications such as switching r

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FAIRCHILD

仙童半導(dǎo)體

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：51.93 Kbytes 頁數(shù)：6 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

文件：994.7 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=0.80A)

HEXFET Power MOSFET

文件：175.37 Kbytes 頁數(shù)：6 Pages

IRF

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? For automatic insertion;

Vishay

威世

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=0.80A)

Infineon

英飛凌

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

Renesas

瑞薩

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? For automatic insertion ? End stackable ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

文件：994.7 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET? Power MOSFET

HEXFET Power MOSFET

文件：1.8102 Mbytes 頁數(shù)：8 Pages

IRF