-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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INTERSIL

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

200V, P-CHANNEL The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET

文件：135.28 Kbytes 頁數(shù)：7 Pages

IRF

Avalanche-Energy-Rated P-Channel Power MOSFETs

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

P-Channel MOSFET in a Hermetically sealed TO39

文件：16.69 Kbytes 頁數(shù)：1 Pages

SEME-LAB

-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re ? -4.0A, -200V\n? rDS(ON) = 0.800?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance;

Renesas

瑞薩

高可靠性功率 MOSFET

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Infineon

英飛凌

MOSFETs and JFETs

TT Electronics