| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFBC20 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH 文件：599.86 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBC20 | Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
文件：171.92 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRFBC20 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation 文件：4.62363 Mbytes 頁數(shù)：7 Pages | KERSEMI | KERSEMI | |
IRFBC20 | iscN-Channel MOSFET Transistor 文件：328.39 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRFBC20 | Power MOSFET 文件：2.10734 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBC20 | Power MOSFET 文件：1.65144 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH 文件：599.86 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It 文件：355.61 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET FEATURES ? Surface-mount (IRFBC20S, SiHFBC20S) ? Low-profile through-hole (IRFBC20L, SiHFBC20L) ? Available in tape and reel (IRFBC20, SiiHFBC20S) ? Dynamic dV/dt rating ? 150 °C operating temperature ? Fast switching ? Fully avalanche rated ? Material categorization: for definitions of co 文件：310.72 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It 文件：381.21 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
詳細參數(shù)
- 型號：
IRFBC20
- 功能描述：
MOSFET N-Chan 600V 2.2 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
06+ |
TO-220 |
10000 |
全新原裝 絕對有貨 |
詢價 | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
IR |
2015+ |
TO-220 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
24+ |
原廠封裝 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
VISHAY |
25+ |
TO-220 |
3800 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IR |
24+ |
TO-220 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
IR |
18+ |
TO-220 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
IR |
18+ |
TO220 |
12500 |
全新原裝正品,本司專業(yè)配單,大單小單都配 |
詢價 |
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