| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF1104 | Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件：101.15 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRF1104 | N-Channel MOSFET Transistor 文件：338.55 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRF1104 | 采用 TO-220 封裝的 40V 單 N 溝道功率 MOSFET \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關\n? 完全雪崩額定值\n? 175°C 的工作溫度; | Infineon 英飛凌 | Infineon | |
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件：208.86 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t 文件：263.14 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A ) VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件：190.33 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th 文件：208.86 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.009? ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t 文件：263.14 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology 文件：191.29 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Advanced Process Technology 文件：191.29 Kbytes 頁數(shù)：9 Pages | IRF | IRF |
技術參數(shù)
- OPN：
IRF1104PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
9 m?
- ID @25°C max：
100 A
- QG typ @10V：
62 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2021+ |
TO-220 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
IR |
25+ |
QFN |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
17+ |
TO-220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
23+ |
65480 |
詢價 | ||||
IR |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
2022+ |
969 |
全新原裝 貨期兩周 |
詢價 |
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