| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF231 | N-Channel Power MOSFETs, 12A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V 文件:177.14 Kbytes 頁數(shù):6 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
IRF231 | N-CHANNEL POWER MOSFETS FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (Standard) 文件:212.01 Kbytes 頁數(shù):5 Pages | SAMSUNG 三星 | SAMSUNG | |
IRF231 | 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica 文件:69.65 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | |
IRF231 | N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
IRF231 | N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● 文件:106.61 Kbytes 頁數(shù):3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
IRF231 | N-Channel Power Mosfets 文件:155.57 Kbytes 頁數(shù):6 Pages | ARTSCHIP | ARTSCHIP | |
IRF231 | High Power,High Speed Applications 文件:48.2 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 | NJS | NJS |
技術(shù)參數(shù)
- Maximum Power Dissipation:
73000mW
- Maximum Drain Source Voltage:
150V
- Maximum Continuous Drain Current:
9A
- Configuration:
Single
- Channel Type:
N
- Category:
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-3 |
10000 |
詢價 | |||
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
UNMARKED |
新 |
17 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
MOT |
25+ |
52 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
IR |
22+ |
TO-3 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-3 |
52726 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IR |
23+ |
TO-3 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-3 |
7000 |
詢價 | |||
24+ |
N/A |
82000 |
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇 |
詢價 |
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