30V N & P-Channel PowerTrench MOSFETs

General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

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FAIRCHILD

仙童半導(dǎo)體

N- and P-Channel 30 V (D-S) MOSFET

文件：1.23659 Mbytes 頁(yè)數(shù)：14 Pages

VBSEMI

微碧半導(dǎo)體

30V N & P-Channel PowerTrench? MOSFETs

General Description\nThese N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.\nThese devices are well suited for low voltage and battery pow ? Q1 4.1 A, 30V.\n?? RDS(ON) = 80 mW @ VGS = 10 V\n?? RDS(ON) = 130 mW @ VGS = 4.5 V\n? Q2 –3.4 A, 30V.\n?? RDS(ON) = 130 mW @ VGS = –10 V\n?? RDS(ON) = 200 mW @ VGS = –4.5 V\n? Low gate charge\n? High performance trench technology for extremely low RDS(ON).\n? High power and handling capability in ;

ONSEMI

安森美半導(dǎo)體

GaAlAs Laser Diode

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OPNEXT

60V Complementary PowerTrench MOSFET

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KEXIN

科信電子

Mobile I/O Companion Supporting Key-Scan, I/O Expansion, PWM, and ACCESS.bus Host Interface

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NSC

國(guó)半