絲印：FDS8638；Package：SO-8；N-Channel PowerTrench? MOSFET 40 V, 18 A, 4.3 mΩ

Features Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s

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ONSEMI

安森美半導體

N-Channel PowerTrench? MOSFET 40 V, 18 A, 4.3 m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ■ Max rDS(on) = 4.3 m? at VGS = 10 V, ID =

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FAIRCHILD

仙童半導體

N 溝道，PowerTrench? MOSFET，40V，18A，4.3mΩ

此N溝道MOSFET器件采用飛兆半導體先進的PowerTrench?工藝生產(chǎn)，這一先進工藝是專為最大限度地降低導通阻抗并保持卓越開關(guān)性能而定制的。 ?VGS = 10 V，ID = 18 A時，最大rDS(on) = 4.3 mΩ\n?VGS = 4.5 V，ID = 16 A時，最大rDS(on) = 5.4 mΩ\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(on)\n?100%經(jīng)過UIL測試\n?符合RoHS標準;

ONSEMI

安森美半導體

Single-chip advanced LCD TV controller

文件：117.77 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

Single-chip advanced LCD TV controller

文件：117.77 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

LA8638NV

Overview The LA8638NV provides dynamic range expansion, noise suppression for enhancing the quality of audio signals in cordless telephones and other communications systems. This single chip provides the functions that make it ideal for cordless telephones: a compressor with a logarithmic compres

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SANYO

三洋