N-Channel PowerTrench? MOSFET 100 V, 7 A, 23 m?

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N 溝道 Power Trench? MOSFET 100V，7A，23mΩ

該N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 ?VGS = 10 V，ID = 7 A時(shí)，最大rDS(on) = 23mΩ\n?VGS = 6 V，ID = 5.5 A時(shí)，最大rDS(on) = 36 mΩ\n? High Performance Trench Technology for Extremely Low rDS(on)\n?100%經(jīng)過UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

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N-Channel 100-V (D-S) MOSFET

Application LED Backlighting Synchronous Rectifiers for SMPS o Power management ? PWM Application

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TECHPUBLIC

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Complete Single and Dual-Channel Optical Data Acquisition System

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MAXIM

美信

Best-in-Class Optical Pulse Oximeter and Heart-Rate Sensor for Wearable Health

文件：1.10686 Mbytes 頁數(shù)：89 Pages

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