Single N-Channel PowerTrench MOSFET

General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ■ Max rDS(on) = 10.5m? at VGS = 10V, ID = 12

文件：409.36 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，40V，12.8A，10.5mΩ

該N溝道MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開(kāi)關(guān)性能而定制的。 ?最大rDS(on) = 10.5m（VGS = 10V, ID = 12.8A）\n?最大rDS(on) = 12.3mΩ （VGS = 4.5V, ID = 11.4A）\n?低柵極電荷 \n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的rDS(on)\n?高功率和高電流處理能力\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

絲印：8447；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ? Vos=40V lo =15A Roson

文件：1.97292 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

N-Channel 100-V (D-S) MOSFET

文件：988.48 Kbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體