絲?。?strong>FDS8878；Package：SOP-8；30V N-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability RoHS Compliant VDS (V) =30V ID = 10.2A (VGS = 10V) RDS(ON)

文件：598.24 Kbytes 頁數(shù)：9 Pages

UMW

友臺半導體

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ■ rDS(on)

文件：634.55 Kbytes 頁數(shù)：12 Pages

FAIRCHILD

仙童半導體

N-Channel PowerTrench? MOSFET

文件：632.38 Kbytes 頁數(shù)：12 Pages

FAIRCHILD

仙童半導體

N 溝道，PowerTrench? MOSFET，30V，10.2A，14mΩ

此N溝道MOSFET是專為使用同步或傳統(tǒng)開關PWM控制器來改進DC/DC轉換器整體功效而設計的。 已針對低柵極電荷、低rDS(ON) 和高速開關進行了優(yōu)化。 ?RDS(ON) = 14mΩ @ VGS = 10V @ ID = 10.2A\n?RDS(ON) = 17mΩ @ VGS = 4.5V @ ID = 9.3A\n?高性能溝道技術可實現(xiàn)極低的RDS(on)\n?低柵極電荷\n?高功率和高電流處理能力\n?符合RoHS標準;

ONSEMI

安森美半導體

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ■ rDS(on)

文件：634.55 Kbytes 頁數(shù)：12 Pages

FAIRCHILD

仙童半導體

N-Channel 30-V (D-S) MOSFET

Application Reverse Battery protection ? Load switch ? Power management PWM Application

文件：2.24949 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

N-Channel PowerTrench? MOSFET

文件：632.38 Kbytes 頁數(shù)：12 Pages

FAIRCHILD

仙童半導體