25 W, DC - 15 GHz, 40 V, GaN HEMT

Description Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications. The datashe

文件：2.3306 Mbytes 頁數(shù)：11 Pages

WOLFSPEED

6 W, 18.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for

文件：868.72 Kbytes 頁數(shù)：9 Pages

WOLFSPEED

25 W, 18.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for

文件：1.28552 Mbytes 頁數(shù)：10 Pages

WOLFSPEED

70 W, 18.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for

文件：982.33 Kbytes 頁數(shù)：10 Pages

WOLFSPEED

15 W, DC - 6.0 GHz, 50 V, GaN HEMT

Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV

文件：1.69027 Mbytes 頁數(shù)：12 Pages

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30 W, DC - 6.0 GHz, GaN HEMT

Description The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 120

文件：5.29346 Mbytes 頁數(shù)：27 Pages

WOLFSPEED

60 W, DC - 2.7 GHz, 50 V, GaN HEMT for Communication Amplifiers and Pulse Radar Applications

Description Wolfspeed’s CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4 mm x 6.5 mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range o

文件：1.81665 Mbytes 頁數(shù)：15 Pages

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500 W, 2.7 - 3.1 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied

文件：808.59 Kbytes 頁數(shù)：11 Pages

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2.7 – 3.1 GHz, 500 W GaN HEMT

Description Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in ra

文件：3.06073 Mbytes 頁數(shù)：26 Pages

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60 W, 2700-3800 MHz, 50 V GaN HEMT for S-Band Radar and LTE Base Stations

Description CGHV35060MP is a 60 W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S-Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1 GHz and 3.1-3.5 GHz while the input matched transistor provides optimal gain, power and eff

文件：2.46447 Mbytes 頁數(shù)：11 Pages

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