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首頁 >CGH>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
CGHV35120F	文件：837.74 Kbytes Page：12 Pages	120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description Wolfspeed’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor i 文件：837.74 Kbytes 頁數(shù)：12 Pages	WOLFSPEED	WOLFSPEED
CGHV35150	文件：1.28659 Mbytes Page：10 Pages	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Description Wolfspeed’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is 文件：1.28659 Mbytes 頁數(shù)：10 Pages	WOLFSPEED	WOLFSPEED
CGHV35400F	文件：928.64 Kbytes Page：11 Pages	400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is mat 文件：928.64 Kbytes 頁數(shù)：11 Pages	WOLFSPEED	WOLFSPEED
CGHV35400F1	文件：1.9263 Mbytes Page：21 Pages	400 W, 2.9 - 3.5 GHz, GaN HEMT Description Wolfspeed’s CGHV35400F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.9 - 3.5 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in ra 文件：1.9263 Mbytes 頁數(shù)：21 Pages	WOLFSPEED	WOLFSPEED
CGHV38375F	文件：1.26084 Mbytes Page：22 Pages	400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN-on-Silicon Carbide Transistor (IM-FET) Description Wolfspeed’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 - 3.75 GHz providing coverage over the entire S-Band radar band. This highpower amplifier provides >10 dB of large signal gain and 40 power-added eff 文件：1.26084 Mbytes 頁數(shù)：22 Pages	WOLFSPEED	WOLFSPEED
CGHV40030	文件：3.30113 Mbytes Page：15 Pages	30 W, DC - 6 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S- and C-Band amplifier applications. The datasheet specifi 文件：3.30113 Mbytes 頁數(shù)：15 Pages	WOLFSPEED	WOLFSPEED
CGHV40050	文件：2.065409 Mbytes Page：11 Pages	50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in t 文件：2.065409 Mbytes 頁數(shù)：11 Pages	WOLFSPEED	WOLFSPEED
CGHV40100	文件：2.30914 Mbytes Page：16 Pages	100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high g 文件：2.30914 Mbytes 頁數(shù)：16 Pages	WOLFSPEED	WOLFSPEED
CGHV40180F	文件：3.00567 Mbytes Page：16 Pages	180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high 文件：3.00567 Mbytes 頁數(shù)：16 Pages	WOLFSPEED	WOLFSPEED
CGHV40180P	文件：713.32 Kbytes Page：11 Pages	180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description Cree’s CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain 文件：713.32 Kbytes 頁數(shù)：11 Pages	WOLFSPEED	WOLFSPEED

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技術(shù)參數(shù)

Min Frequency (MHz)：
0
Max Frequency(MHz)：
2500
Gain(dB)：
21.0
Efficiency(%)：
35
Operating Voltage(V)：
28
Form：
Packaged Discrete Transistor
Peak Output Power(W)：
120
Technology：
GaN on SiC

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	CGHMK325BJ474KN-T		24+		1800		詢價(jià)
深圳市利加科技有限公司	CGH40090PP	CREE	16+	NA	8800	原裝現(xiàn)貨,貨真價(jià)優(yōu)	詢價(jià)
深圳市正邁科技有限公司	CGH35015F	CREE	23+	NA	8021	專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià)，原裝元器件供應(yīng)，支持開發(fā)樣品	詢價(jià)
上海金慶電子技術(shù)有限公司	CGH312T450W5L	Cornell-Dubilier	新		14	全新原裝貨期兩周	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	CGHV22100	CREE	24+	SMD	1680	一級(jí)代理原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市振宏微科技有限公司	CGHMK325BJ474KN-T	CHINAXYJ	23+	1210	9868	專做原裝正品,假一罰百!	詢價(jià)
深圳市華斯頓科技有限公司	CGH40090PP	CREE	25+23+	BGA	21784	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳誠(chéng)思涵科技有限公司	CGHV1J006D	CREE	17+	BGA	60000	保證原裝進(jìn)口現(xiàn)貨可開17%增值稅發(fā)票	詢價(jià)
深圳市宇集芯電子有限公司	CGHV27030S	CREE	25+	N/A	90000	進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理	詢價(jià)
深圳市昊創(chuàng)電子有限公司	CGHV96050F2	CREE/科銳	14+	die	50	CREE優(yōu)勢(shì)訂貨-軍工器件供應(yīng)商	詢價(jià)

更多CGH供應(yīng)商更新時(shí)間2026-1-21 16:30:00

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