200 W, 50 V, GaN HEMT

Description Wolfspeed's CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, hi

文件：1.29917 Mbytes 頁數：12 Pages

WOLFSPEED

320 W, 4.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

文件：833.38 Kbytes 頁數：8 Pages

WOLFSPEED

200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT

Description Wolfspeed's CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applicati

文件：1.94153 Mbytes 頁數：15 Pages

WOLFSPEED

70 W, 4.4 - 5.9 GHz, 50 V, RF Power GaN HEMT

Description Wolfspeed's CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. The good efficiency, high gain

文件：2.06667 Mbytes 頁數：14 Pages

WOLFSPEED

350 W, 5.2 - 5.9 GHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems

Description Wolfspeed's CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The transistor is

文件：3.34987 Mbytes 頁數：14 Pages

WOLFSPEED

40 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

文件：1.41199 Mbytes 頁數：8 Pages

WOLFSPEED

75 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEM

文件：965.45 Kbytes 頁數：8 Pages

WOLFSPEED

170 W, 6.0 GHz, 50V GaN HEMT Die

Description Wolfspeed’s CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

文件：979.81 Kbytes 頁數：8 Pages

WOLFSPEED

50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

Description Wolfspeed's CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared t

文件：2.04703 Mbytes 頁數：13 Pages

WOLFSPEED

Precision High-Voltage Thick Film Resistors

文件：351.18 Kbytes 頁數：3 Pages

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