15 W, DC - 6.0 GHz, 50 V, GaN HEMT

Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV

文件：1.69027 Mbytes 頁數(shù)：12 Pages

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15 W, DC - 6.0 GHz, 50 V, GaN HEMT

文件：1.41631 Mbytes 頁數(shù)：12 Pages

CREE

科銳

15 W, DC - 6.0 GHz, 50 V, GaN HEMT

文件：1.41631 Mbytes 頁數(shù)：12 Pages

CREE

科銳

15 W, DC - 6.0 GHz, 50 V, GaN HEMT

文件：1.41631 Mbytes 頁數(shù)：12 Pages

CREE

科銳

15 W; DC - 6.0 GHz; 50 V; GaN HEMT

The CGHV27015S is an unmatched; ?gallium-nitride (GaN) high electron mobility?transistor (HEMT) designed specifically for high efficiency; high gain and wide?bandwidth capabilities; which makes the CGHV27015S ideal for LTE; 4G Telecom?and BWA amplifier applications. The CGHV27015S GaN HEMT devices a ·2.4 – 2.7 GHz Operation\n·15 W Typical Output Power\n·21 dB Gain at 2.5 W PAVE\n·-38 dBc ACLR at 2.5 W PAVE\n·32% efficiency at 2.5 W PAVE\n·High degree of APD and DPD correction can be applied;

MACOM

Package：12-VFDFN 裸露焊盤；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 50V 12DFN

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