6 W, 18.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for

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6 W, 18.0 GHz, GaN HEMT Die

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6-W, 18.0-GHz, GaN HEMT Die

Wolfspeed’s CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of appl ·Up to 18 GHz Operation;

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6 W; 18.0 GHz; GaN HEMT Die

The CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25-?m gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications ·17 dB Typ. Small Signal Gain at 10 GHz\n·60% Typ. PAE at 10 GHz\n·6 W Typical Psat\n·40 V Operation\n·Up to 18GHz Operation;

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Package：模具；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 40V DIE

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