70 W, 18.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for

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WOLFSPEED

70 W, 18.0 GHz, GaN HEMT Die

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CREE

科銳

70-W, 18.0-GHz, GaN HEMT Die

Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of appl ·Up to 18 GHz Operation;

MACOM

70 W; 18.0 GHz; GaN HEMT Die

The CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25- μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of application ·60% Typ. PAE at 10 GHz\n·70 W Typical PSAT\n·40 V Operation\n·Up to 18 GHz Operation;

MACOM