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          首頁 >CGH>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CGH60015D

          15 W, 6.0 GHz, GaN HEMT Die

          Description Wolfspeed’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

          文件:980.85 Kbytes 頁數(shù):9 Pages

          WOLFSPEED

          CGH60030D

          30 W, 6.0 GHz, GaN HEMT Die

          Description Wolfspeed’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

          文件:1.30824 Mbytes 頁數(shù):9 Pages

          WOLFSPEED

          CGH60060D

          60 W, 6.0 GHz, GaN HEMT Die

          Description Wolfspeed’s CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

          文件:1.30457 Mbytes 頁數(shù):8 Pages

          WOLFSPEED

          CGH60120D

          120 W, 6.0 GHz, GaN HEMT Die

          Description Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

          文件:1.05102 Mbytes 頁數(shù):8 Pages

          WOLFSPEED

          CGH60120D

          120 W, 6.0 GHz, GaN HEMT Die

          Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power de

          文件:592.12 Kbytes 頁數(shù):7 Pages

          CREE

          科銳

          CGHV14250

          250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems

          Description Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for DC - 1.6 GHz L-Band radar amplifier applications. The transistor coul

          文件:1.86682 Mbytes 頁數(shù):12 Pages

          WOLFSPEED

          CGHV14500

          500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems

          Description Wolfspeed’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications. The transistor coul

          文件:3.38474 Mbytes 頁數(shù):20 Pages

          WOLFSPEED

          CGHV14800F1

          DC-1.4 GHz, 800 W GaN Transistor

          Description Wolfspeed’s CGHV14800F1 is an 800W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 0.4um GaN on SiC production process. The CGHV14800F1 operates up to 1.4 GHz and supports both defense and commercial-related avionics and radar applications. The CGHV14

          文件:1.13808 Mbytes 頁數(shù):18 Pages

          WOLFSPEED

          CGHV1A250F

          8.8 - 9.6 GHz, 300 W GaN HPA

          Description Wolfspeed's CGHV1250F is a 300W packaged transistor fully matched to 50 ohms at both unput and output ports. Utilizing Wolfspeed's high performance, 50V, 0.25um GaN on SiC productiom process, the CGHV1A250F operates from 8.8-9.6 GHz and targets pulsed radar applications such a marin

          文件:1.84619 Mbytes 頁數(shù):17 Pages

          WOLFSPEED

          CGHV1F006S

          6 W, DC - 15 GHz, 40 V, GaN HEMT

          Description Wolfspeed’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet s

          文件:3.90002 Mbytes 頁數(shù):22 Pages

          WOLFSPEED

          技術(shù)參數(shù)

          • Min Frequency (MHz):

            0

          • Max Frequency(MHz):

            2500

          • Gain(dB):

            21.0

          • Efficiency(%):

            35

          • Operating Voltage(V):

            28

          • Form:

            Packaged Discrete Transistor

          • Peak Output Power(W):

            120

          • Technology:

            GaN on SiC

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          24+
          1800
          詢價(jià)
          CREE
          16+
          NA
          8800
          原裝現(xiàn)貨,貨真價(jià)優(yōu)
          詢價(jià)
          CREE
          23+
          NA
          8021
          專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià),原裝元器件供應(yīng),支持開發(fā)樣品
          詢價(jià)
          Cornell-Dubilier
          14
          全新原裝 貨期兩周
          詢價(jià)
          CREE
          24+
          SMD
          1680
          一級(jí)代理原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          CHINAXYJ
          23+
          1210
          9868
          專做原裝正品,假一罰百!
          詢價(jià)
          CREE
          25+23+
          BGA
          21784
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          CREE
          17+
          BGA
          60000
          保證原裝進(jìn)口現(xiàn)貨可開17%增值稅發(fā)票
          詢價(jià)
          CREE
          25+
          N/A
          90000
          進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
          詢價(jià)
          CREE/科銳
          14+
          die
          50
          CREE優(yōu)勢(shì)訂貨-軍工器件供應(yīng)商
          詢價(jià)
          更多CGH供應(yīng)商 更新時(shí)間2026-1-21 16:30:00
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