| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
15 W, 6.0 GHz, GaN HEMT Die Description Wolfspeed’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs 文件:980.85 Kbytes 頁數(shù):9 Pages | WOLFSPEED | WOLFSPEED | ||
30 W, 6.0 GHz, GaN HEMT Die Description Wolfspeed’s CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs 文件:1.30824 Mbytes 頁數(shù):9 Pages | WOLFSPEED | WOLFSPEED | ||
60 W, 6.0 GHz, GaN HEMT Die Description Wolfspeed’s CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o 文件:1.30457 Mbytes 頁數(shù):8 Pages | WOLFSPEED | WOLFSPEED | ||
120 W, 6.0 GHz, GaN HEMT Die Description Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o 文件:1.05102 Mbytes 頁數(shù):8 Pages | WOLFSPEED | WOLFSPEED | ||
120 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power de 文件:592.12 Kbytes 頁數(shù):7 Pages | CREE 科銳 | CREE | ||
250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for DC - 1.6 GHz L-Band radar amplifier applications. The transistor coul 文件:1.86682 Mbytes 頁數(shù):12 Pages | WOLFSPEED | WOLFSPEED | ||
500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications. The transistor coul 文件:3.38474 Mbytes 頁數(shù):20 Pages | WOLFSPEED | WOLFSPEED | ||
DC-1.4 GHz, 800 W GaN Transistor Description Wolfspeed’s CGHV14800F1 is an 800W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 0.4um GaN on SiC production process. The CGHV14800F1 operates up to 1.4 GHz and supports both defense and commercial-related avionics and radar applications. The CGHV14 文件:1.13808 Mbytes 頁數(shù):18 Pages | WOLFSPEED | WOLFSPEED | ||
8.8 - 9.6 GHz, 300 W GaN HPA Description Wolfspeed's CGHV1250F is a 300W packaged transistor fully matched to 50 ohms at both unput and output ports. Utilizing Wolfspeed's high performance, 50V, 0.25um GaN on SiC productiom process, the CGHV1A250F operates from 8.8-9.6 GHz and targets pulsed radar applications such a marin 文件:1.84619 Mbytes 頁數(shù):17 Pages | WOLFSPEED | WOLFSPEED | ||
6 W, DC - 15 GHz, 40 V, GaN HEMT Description Wolfspeed’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet s 文件:3.90002 Mbytes 頁數(shù):22 Pages | WOLFSPEED | WOLFSPEED |
技術(shù)參數(shù)
- Min Frequency (MHz):
0
- Max Frequency(MHz):
2500
- Gain(dB):
21.0
- Efficiency(%):
35
- Operating Voltage(V):
28
- Form:
Packaged Discrete Transistor
- Peak Output Power(W):
120
- Technology:
GaN on SiC
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
1800 |
詢價(jià) | |||||
CREE |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
CREE |
23+ |
NA |
8021 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià),原裝元器件供應(yīng),支持開發(fā)樣品 |
詢價(jià) | ||
Cornell-Dubilier |
新 |
14 |
全新原裝 貨期兩周 |
詢價(jià) | |||
CREE |
24+ |
SMD |
1680 |
一級(jí)代理原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
CHINAXYJ |
23+ |
1210 |
9868 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
CREE |
25+23+ |
BGA |
21784 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
CREE |
17+ |
BGA |
60000 |
保證原裝進(jìn)口現(xiàn)貨可開17%增值稅發(fā)票 |
詢價(jià) | ||
CREE |
25+ |
N/A |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理 |
詢價(jià) | ||
CREE/科銳 |
14+ |
die |
50 |
CREE優(yōu)勢(shì)訂貨-軍工器件供應(yīng)商 |
詢價(jià) |
相關(guān)規(guī)格書
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