| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
25 W, RF Power GaN HEMT Description Wolfspeed's CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain 文件：2.72163 Mbytes 頁數(shù)：14 Pages | WOLFSPEED | WOLFSPEED | ||
35 W, DC - 4 GHz, RF Power GaN HEMT Description Wolfspeed's CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga 文件：3.91088 Mbytes 頁數(shù)：14 Pages | WOLFSPEED | WOLFSPEED | ||
45 W, DC - 4 GHz RF Power GaN HEMT Description Wolfspeed’s CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMT soffer high efficiency, high gain 文件：4.19832 Mbytes 頁數(shù)：15 Pages | WOLFSPEED | WOLFSPEED | ||
90 W, RF Power GaN HEMT Description Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain 文件：1.69173 Mbytes 頁數(shù)：13 Pages | WOLFSPEED | WOLFSPEED | ||
120 W, RF Power GaN HEMT Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an 文件：1.5883 Mbytes 頁數(shù)：13 Pages | WOLFSPEED | WOLFSPEED | ||
120 W, RF Power GaN HEMT Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga 文件：1.45256 Mbytes 頁數(shù)：12 Pages | WOLFSPEED | WOLFSPEED | ||
180 W, RF Power GaN HEMT Description Wolfspeed's CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high 文件：6.17836 Mbytes 頁數(shù)：14 Pages | WOLFSPEED | WOLFSPEED | ||
10 W, C-Band, Unmatched, GaN HEMT Description Wolfspeed's CGH55015F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is a 文件：3.91102 Mbytes 頁數(shù)：11 Pages | WOLFSPEED | WOLFSPEED | ||
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Description Wolfspeed's CGH55030F1/P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transis 文件：1.66283 Mbytes 頁數(shù)：13 Pages | WOLFSPEED | WOLFSPEED | ||
8 W, 6.0 GHz, GaN HEMT Die Description Wolfspeed’s CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs 文件：977.85 Kbytes 頁數(shù)：9 Pages | WOLFSPEED | WOLFSPEED |
技術(shù)參數(shù)
- Min Frequency (MHz)：
0
- Max Frequency(MHz)：
2500
- Gain(dB)：
21.0
- Efficiency(%)：
35
- Operating Voltage(V)：
28
- Form：
Packaged Discrete Transistor
- Peak Output Power(W)：
120
- Technology：
GaN on SiC
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
1800 |
詢價 | |||||
CREE |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
CREE |
23+ |
NA |
8021 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理特價，原裝元器件供應(yīng)，支持開發(fā)樣品 |
詢價 | ||
Cornell-Dubilier |
新 |
14 |
全新原裝 貨期兩周 |
詢價 | |||
CREE |
24+ |
SMD |
1680 |
一級代理原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
CHINAXYJ |
23+ |
1210 |
9868 |
專做原裝正品,假一罰百! |
詢價 | ||
CREE |
25+23+ |
BGA |
21784 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
CREE |
17+ |
BGA |
60000 |
保證原裝進(jìn)口現(xiàn)貨可開17%增值稅發(fā)票 |
詢價 | ||
CREE |
25+ |
N/A |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價格合理 |
詢價 | ||
CREE/科銳 |
14+ |
die |
50 |
CREE優(yōu)勢訂貨-軍工器件供應(yīng)商 |
詢價 |
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