25 W, 18.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for

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WOLFSPEED

25 W, 18.0 GHz, GaN HEMT Die

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CREE

科銳

25 W; 18.0 GHz; GaN HEMT Die

The CGHV1J025D is a high-voltage; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a ?0.25-μm ?gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applicati ·17 dB Typ. Small Signal Gain at 10 GHz\n·60% Typ. PAE at 10 GHz\n·25 W Typical PSAT\n·40 V Operation\n·Up to 18 GHz Operation;

MACOM

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CREE

科銳

上傳：深圳市歐特拉科技有限公司

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MACOM

上傳：深圳市達恩科技有限公司