500 W, 2.7 - 3.1 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied

文件：808.59 Kbytes 頁數(shù)：11 Pages

WOLFSPEED

500 W, 2700 - 3100 MHz, 50-Ohm Input

文件：722.17 Kbytes 頁數(shù)：10 Pages

CREE

科銳

2.7 – 3.1 GHz, 500 W GaN HEMT

Description Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in ra

文件：3.06073 Mbytes 頁數(shù)：26 Pages

WOLFSPEED

500 W, 2700 - 3100 MHz, 50-Ohm Input

文件：722.17 Kbytes 頁數(shù)：10 Pages

CREE

科銳

500 W, 2700 - 3100 MHz, 50-Ohm Input

文件：722.17 Kbytes 頁數(shù)：10 Pages

CREE

科銳

500W, 2.7 - 3.1 GHz, GaN IMFET

The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·650 W Typical Output Power\n·12 dB Power Gain\n·65% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

500W, 2.7 - 3.1 GHz, GaN IMFET

2.7 – 3.1 GHz Operation650 W Typical Output Power12 dB Power Gain65% Typical Drain Efficiency50 Ohm Internally Matched<0.3 dB Pulsed Amplitude Droop ? 2.7 – 3.1 GHz Operation\n? 650 W Typical Output Power\n? 12 dB Power Gain\n? 65% Typical Drain Efficiency\n? 50 Ohm Internally Matched\n? <0.3 dB Pulsed Amplitude Droop;

MACOM

500W, 2.7 - 3.1 GHz, GaN IMFET

The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·650 W Typical Output Power\n·12 dB Power Gain\n·65% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

MACOM

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：TEST FIXTURE FOR CGHV31500F

WOLFSPEED